Belas (102-13/201835) Charge transport in SiC radiation detectors

Grant agency: GACR
Identification number of grant: 18-12449S
Head of the project: Doc. Ing. Eduard Belas, CSc.

The main object of this project is the characterization of a broad spectrum of transport and spectroscopic properties of SiC radiation detectors prepared with various types of electrical contacts using L-TCT and other characterization methods and finding optimal preparation method of detector with the highest mobility-lifetime product. Wide band-gap (WBG) silicon carbide (SiC) plays an important role in optoelectronic applications as a material for production of uncooled radiation detectors operating in extremely harsh environments such as in space and the automotive, aeronautic and nuclear industries.