Research

Transport properties of semiconductors (CdTe/CdZnTe, SiC, GaAs, TlBr, perovskites)

• Characterization methods:
  • Time-of-Flight Laser-induced Transient current technique (L-TCT) - measurement of the transport properties of high resistive semiconductors
  • Temperature dependence of the electrical conductivity and Hall effect in the temperature interval 4,2–1300K
  • Contactless resistivity (COREMA)

Optical properties of semiconductors (CdTe/CdZnTe, SiC, GaAs, TlBr, perovskites)

• Characterization methods:
  • Pockels effect
  • Photoluminiscence 4,2–300K
  • Infrared absorption/ transmission 4,2–300K
  • Photoconductivity 4,2–300K

Deep level spectroscopy

• Characterization methods:
  • Photo-Hall effect spectroscopy (PHES)
  • Thermoelectric emission spectroscopy (TEES)

Spectroscopic properties of detectors

• Characterization methods:
  • Measurement of mobility-lifetime product using alpha particals and gamma radiation
  • Time-of-Flight Laser-induced Transient current technique (L-TCT) - measurement of the space charge formation, profile of the internal electric field and mobility lifetime product in detectors

Single crystal growth of the bulk semiconductors (CdTe/CdZnTe, perovskites)

• Growth methods:
  • Vertical Gradient Freeze Method (VGFM)
  • Vertical Bridgman Method (VBM)
  • Horizontal Bridgman Method (HBM)
  • Horizontal Traveling Heater Method (H-THM)