Research

Směry výzkumu

Growth of semiconducting II-VI single crystals (CdTe/CdZnTe)

  • Growth methods:
    • Vertical Gradient Freeze Method (VGFM)
    • Vertical Bridgman Method (VBM)
    • Horizontal Bridgman Method (HBM)
    • Horizontal Traveling Heater Method (H-THM)

Transport properties of semiconductors

  • Characterization methods:
    • Temperature dependence of the electrical conductivity and Hall effect in the temperature interval 4,2–300K, 4,2–500K, 300–1300K
    • Transient current technique (TCT) - measurement of transport properties of radiation detectors
    • Contactless resistivity (COREMA)

Optical properties of semiconductors

  • Characterization methods:
    • Pockels effect
    • Photoluminiscence 4,2–300K
    • Infrared absorption/ transmission 4,2–300K
    • Photoconductivity 4,2–300K

Deep level spectroscopy

  • Characterization methods:
    • Photo-Hall effect spectroscopy (PHES)
    • Thermoelectric emission spectroscopy (TEES)

Spectroscopic properties of detectors

  • Characterization methods:
    • Measurement of mobility-lifetime product using alpha particals and gamma radiation
    • Transient current technique (TCT) - measurement of the internal electric field in detectors