Publikace v časopisech

1.

R. Grill, J. Franc, I. Turkevych, P. Höschl, E. Belas, P. Moravec, "Semi-insulating CdTe with a minimized deep-level doping", J. Electron. Mater. 34 (2005) 939-943.

2.

R. Grill, J. Franc, I. Turkevych, P. Höschl, E. Belas, P. Moravec, "Semi-insulating CdTe with a minimum deep level doping", phys. stat. sol. (c) 2 (2005) 1489-1494.

3.

R. Grill, J. Franc, P. Höschl, I. Turkevych, E. Belas, P. Moravec, "Semi-insulating Te-saturated CdTe", IEEE Trans. Nucl. Sci. 52 (2005) 1925-1931.

4.

R. Grill, I. Turkevych, J. Franc, E. Belas, P. Moravec, P. Höschl, "Defect equilibrium and complex formation in CdTe(Sn)", phys. stat. sol. (c) 1 (2004) 727-730.

5.

I. Turkevych, J. Franc, R. Grill, P. Höschl, E. Belas, P. Moravec, "Differential thermal analysis of supercooling in CdTe", J. Electron. Mater. 33 (2004) 658-661.

6.

E. Belas, R. Grill, J. Franc, L. Turjanska, I. Turkevych, P. Moravec, P. Höschl, "Electrical properties of CdTe near the melting point", J. Electron. Mater. 32 (2003) 752-755.

7.

I. Turkevych, R. Grill, J. Franc, P. Höschl, E. Belas, P. Moravec, M. Fiederle, K.W. Benz, "Preparation of semi-insulating CdTe doped with group IV elements by post-growth annealing", Cryst. Res. Technol. 38 (2003) 288-296.

8.

R. Grill, L. Turjanska, J. Franc, E. Belas, I. Turkevych, P. Höschl, "Chemical Self-Diffusion in CdTe", phys. stat. sol. (b) 229 (2002) 161-164.

9.

R. Grill, J. Franc, P. Hlídek, I. Turkevych, E. Belas, P. Höschl, "Defect induced optical transitions in CdTe and Cd_0.96Zn_0.04Te", Semicond. Sci. Technol. 17 (2002) 1282-1287.

10.

I. Turkevych, R. Grill, J. Franc, E. Belas, P. Moravec, M. Fiederle, K.W. Benz, "High Temperature Defect Structure of Cd- and Te-Rich CdTe", IEEE Trans. Nucl. Sci. 49 (2002) 1275-1280.

11.

I. Turkevych, R. Grill, J. Franc, E. Belas, P. Höschl, P. Moravec, "High temperature electron and hole mobility in CdTe", Semicond. Sci. Technol. 17 (2002) 1064-1066.

12.

R. Grill, I. Turkevych, J. Franc, P. Höschl, E. Belas, P. Moravec, "Preparation of semi-insulating CdTe by post growth annealing", Proc. SPIE 4784 (2002) 84-92.

13.

I. Turkevych, R. Grill, J. Franc, P. Höschl, E. Belas, P. Moravec, K.W. Benz, "Preparation of semi-insulating CdTe doped with group IV elements by post-growth annealing", Cryst. Res. Technol. 38 (2002) 288-296.

14.

R. Grill, J. Franc, P. Höschl, E. Belas, I. Turkevych, L. Turjanska, P. Moravec, "Semiinsulating CdTe", Nucl. Instr. Meth. A 487 (2002) 40-46.

15.

P. Höschl, R. Grill, J. Franc, E. Belas, L. Turjanska, I. Turkevych, K.W. Benz, M. Fiederle, "Pure and deep-level doped semiinsulating CdTe", Proc. SPIE 4507 (2001) 273-281.

16.

J. Franc, R. Grill, P. Hlídek, E. Belas, L. Turjanska, P. Höschl, I. Turkevych, A. Toth, P. Moravec, H. Sitter, "The influence of growth conditions on the quality of CdZnTe single crystals", Semicond. Sci. Technol. 16 (2001) 514-520.