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1.

K. Zdansky, L. Pekarek, "Behaviour of manganese in InP compared with other impurities of 3d transition metals", phys. stat. sol. (a) 195 (2003) 74-80.

2.

M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Konrath, M. Webel, J. Ludwig, K.W. Benz, "Characterization of CdTe crystals grown by the Vertical Bridgman method", Nucl. Instr. Meth. A 509 (2003) 75.

3.

H. Boldyryeva, H. Biederman, D. Slavinska, "Composite Ag/C:H films prepared by DC planar magnetron deposition", Thin Solid Films 442 (2003) 86-92.

4.

J. Franc, M. Fiederle, V. Babentsov, A. Fauler, K.W. Benz, R.B. James, "Defect structure of Sn-doped CdTe", J. Electron. Mater. 32 (2003) 772-777.

5.

J. Franc, P. Moravec, P. Hlídek, E. Belas, P. Höschl, R. Grill, Z. Šourek, "Development of inclusion-free CdZnTe substrates from crystals grown by the vertical-gradient freeze method", J. Electron. Mater. 32 (2003) 761-765.

6.

E. Belas, R. Grill, J. Franc, L. Turjanska, I. Turkevych, P. Moravec, P. Höschl, "Electrical properties of CdTe near the melting point", J. Electron. Mater. 32 (2003) 752-755.

7.

M. Fiederle, V. Babentsov, J. Franc, A. Fauler, J. Konrath, "Growth of high resistivity CdTe and (Cd,Zn)Te crystals", Cryst. Res. Technol. 38 (2003) 588-597.

8.

I. Turkevych, R. Grill, J. Franc, P. Höschl, E. Belas, P. Moravec, M. Fiederle, K.W. Benz, "Preparation of semi-insulating CdTe doped with group IV elements by post-growth annealing", Cryst. Res. Technol. 38 (2003) 288-296.

9.

K. Zdansky, L. Pekarek, "Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures", Semicond. Sci. Technol. 18 (2003) 938-944.

10.

J. Pospíšil, R. Bulir, Z. Budinska, R. Novák, B. Sopko, V. Spěváček, T. Cechak, P. Matějka, A. Mackova, A. Cejnarova, J. Krása, "Thermoluminescence properties of CVD diamond films", phys. stat. sol. (a) 199 (2003) 131-137.

11.

E. Belas, V.V. Bogoboyashchyy, R. Grill, Y.M. Ivanov, I.I. Izhnin, A.P. Vlasov, V.A. Yudenkov, "Time relaxation of point defects in p- and n-(HgCd)Te after ion milling", J. Electron. Mater. 32 (2003) 698-702.