Publikace v časopisech
4.
E. Belas, M. Bugár, R. Grill, J. Franc, P. Höschl, "Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe", IEEE Trans. Nucl. Sci. 56 (2009) 1758-1762.
5.
E. Belas, R. Grill, M. Bugár, J. Procházka, P. Hlídek, P. Praus, J. Franc, P. Höschl, "Electromigration of Mobile Defects in CdTe", IEEE Trans. Nucl. Sci. 56 (2009) 1752-1757.
6.
E. Belas, M. Bugár, R. Grill, J. Franc, P. Moravec, P. Hlídek, P. Höschl, "Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing", J. Electron. Mater. 37 (2008) 1212-1218.
7.
E. Belas, R. Grill, J. Franc, P. Hlídek, V. Linhart, T. Slavíček, P. Höschl, "Correlation of electrical and optical properties with charge collection efficiency of In-doped and In plus Si co-doped CdTe", Nucl. Instr. Meth. A 591 (2008) 200-202.
8.
E. Belas, R. Grill, J. Franc, P. Moravec, J. Bok, P. Höschl, "Preparation of semi-insulating CdTe:In by post-grown annealing after elimination of Te inclusions", IEEE Trans. Nucl. Sci. 54 (2007) 786-791.
9.
E. Belas, M. Bugár, R. Grill, P. Horodyský, R. Fesh, J. Franc, P. Moravec, Z. Matěj, P. Höschl, "Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing", J. Electron. Mater. 36 (2007) 1025-1030.
10.
E. Belas, R. Grill, A. Toth, P. Moravec, P. Horodyský, J. Franc, P. Höschl, H. Wolf, "Electrical and optical properties of In-doped CdTe after Cd-rich annealing", IEEE Trans. Nucl. Sci. 52 (2005) 1932-1936.
11.
E. Belas, J. Franc, R. Grill, A. Toth, P. Horodyský, P. Moravec, P. Höschl, "Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing", J. Electron. Mater. 34 (2005) 957-962.
12.
E. Belas, R. Grill, P. Horodyský, P. Moravec, J. Franc, P. Höschl, "Defect distribution in CdTe after Cd saturated annealing", phys. stat. sol. (c) 2 (2005) 1155-1160.
13.
E. Belas, P. Moravec, R. Grill, J. Franc, A. Toth, H. Sitter, P. Höschl, "Silver difusion in p-type CdTe and (CdZn)Te near room temperature", phys. stat. sol. (c) 1 (2004) 929-932.
14.
E. Belas, V.V. Bogoboyashchyy, R. Grill, Y.M. Ivanov, I.I. Izhnin, A.P. Vlasov, V.A. Yudenkov, "Time relaxation of point defects in p- and n-(HgCd)Te after ion milling", J. Electron. Mater. 32 (2003) 698-702.
15.
E. Belas, R. Grill, J. Franc, L. Turjanska, I. Turkevych, P. Moravec, P. Höschl, "Electrical properties of CdTe near the melting point", J. Electron. Mater. 32 (2003) 752-755.
16.
E. Belas, R. Grill, J. Franc, H. Sitter, P. Moravec, P. Höschl, A. Toth, "Formation and Propagation of p-n Junction in p-(HgCd)Te Caused by Dry Etching", J. Electron. Mater. 31 (2002) 738-742.
17.
E. Belas, R. Grill, J. Franc, P. Moravec, R. Varghová, P. Höschl, H. Sitter, A. Toth, "Dynamics of native point defects in H2 and Ar plasma-etched narrow gap (HgCd)Te", J. Cryst. Growth 224 (2001) 52-58.
18.
E. Belas, J. Franc, R. Grill, A. Toth, P. Höschl, H. Sitter, P. Moravec, K. Lischka, "Minority-carrier diffusion length at p-n junction produced in p-Cd0.2Hg0.8Te by Ion-Beam Milling", Inorg. Mater. 32 (1996) 836.
19.
E. Belas, J. Franc, A. Toth, P. Moravec, R. Grill, H. Sitter, P. Höschl, "Type conversion of p-(HgCd)Te using H2/CH4 and Ar reactive ion etching", Semicond. Sci. Technol. 11 (1996) 1116-1120.
20.
E. Belas, R. Grill, J. Franc, A. Toth, P. Höschl, H. Sitter, P. Moravec, K. Lischka, "Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments", J. Cryst. Growth 159 (1996) 1117-1122.
21.
E. Belas, P. Höschl, R. Grill, J. Franc, P. Moravec, K. Lischka, H. Sitter, A. Toth, "Ultrafast diffusion of Hg in Hg1-xCdxTe (x=0.21)", J. Cryst. Growth 138 (1994) 956-963.
22.
E. Belas, P. Höschl, R. Grill, J. Franc, P. Moravec, K. Lischka, H. Sitter, A. Toth, "Deep p-n junction in Hg1-xCdxTe created by ion milling", Semicond. Sci. Technol. 8 (1993) 1695-1699.