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RNDr. Jan Kunc, PhD.

  • Affiliation: Fyzikální ústav UK, Ke Karlovu 5
  • Room: L023, Magnetooptic laboratory
  • Phone: +420 221 912 854
  • Fax: +420 224 922 111

Fields of interest and research experience:

The applicant has an experience with scanning electron microscopy and electron beam lithography. He has an expertise in graphene/SiC field effect transistors current-voltage (I-V) and capacitance voltage (C-V) device characterization and data analysis and modelling. Combination of optical and transport experiments is in permanent scope of Jan‘s interest which he has started during his doctoral study in Grenoble High Magnetic Field Laboratory in France (2007–2011), where the main part of his project was to perform combined magneto-photoluminescence and magneto-resistance measurements in high magnetic fields up to 28 T and low temperatures down to 50 mK. He has also gained experience in Fourier Transform Infrared (FTIR) spectroscopy, photoluminescence excitation, single-quantum dot photoluminescence spectroscopy and ultra-fast time and spectrally resolved pump-probe spectroscopy. He has an experience with X-ray photo-electron spectroscopy (XPS), angular resolved photo-electron spectroscopy (ARPES), low energy electron diffraction (LEED) and low energy electron microscopy (LEEM) data analysis and interpretation. His biggest achievements in the physics of graphene/SiC devices are development and numerical implementation of the theoretical model explaining band gap opening in the bent graphene side-wall ribbons and graphene/SiC tunnelling-Schottky FET.


Curiculum vitae:

RNDr. Jan Kunc, Ph.D., has gained his expertise in graphene growth and graphene device fabrication during his postdoctoral stay (2011–2014) at the Georgia Institute of Technology, Atlanta, USA in the group of Walt de Heer. Jan Kunc’s expertise includes epitaxial graphene growth by thermal decomposition of SiC, hydrogen etching, hydrogen passivation, graphene characterization by Raman scattering spectroscopy, ellipsometry, atomic force microscopy (AFM), electrostatic force microscopy (EFM) in an external AC bias mode, scanning kelvin probe microscopy (SKPM), current atomic force microscopy (I-AFM) and both contact and non-contact mode AFM.


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Defended thesis: